The importance of moisture control for EOT saling of Hf-based dielectrics

Journal of the Electrochemical Society

Volumn 156, Issue 6, 2009, Pages

  Ragnarsson, Lars Åke ^a   Brunco, David P ^b   Yamamoto, Kazuhiko ^c   Tökei, Zsolt ^a   Pourtois, Geoffrey ^a   Delabie, Annelies ^a   Parmentier, Brigitte ^a   Conard, Thierry ^a   Roussel, Philippe ^a   De Gendt, Stefan ^a,d   Heyns, Marc M ^a,e  

^a Imec   (Belgium)

^b Department of Chemistry ^*

^c UNIVERSITY OF LEUVEN   (Belgium)

^d INTEL CORPORATION   (United States)

^e TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-LAYER-DEPOSITED; EQUIVALENT-OXIDE THICKNESS; GATE STACKS; HF CONCENTRATIONS; HIGH TEMPERATURES; RE OXIDATIONS; SPIKE ANNEALING; TEMPERATURE-PROGRAMMED DESORPTIONS; THERMAL TREATMENTS;

ACTIVATION ENERGY; GATE DIELECTRICS; HAFNIUM COMPOUNDS; HEAT TREATMENT; MOISTURE CONTROL; TANTALUM COMPOUNDS; TEMPERATURE PROGRAMMED DESORPTION; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

HAFNIUM;

EID: 65449120284     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3097193     Document Type: Article

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