pFET V t control with HfO 2/TiN/poly-Si gate stack using a lateral oxygenation process

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2009, Pages 42-43

  Cartier, B ^a   Steen, M ^a   Linder, B P ^a   Ando, T ^a   Iijima, R ^b   Frank, M ^a   Newbury, J S ^a   Kim, Y H ^a   McFeely, F R ^a   Copel, M ^a   Haight, R ^a   Choi, C ^a   Callegari, A ^a   Paruchuri, V K ^a   Narayanan, V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Toshiba America Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; GATE STACKS; HIGH-T; INTERFACIAL LAYER; NEAR BAND EDGE; OXYGEN DIFFUSION; POLY-SI; PROCESS OPTIMIZATION;

HAFNIUM COMPOUNDS; LOGIC GATES; METAL RECOVERY; OPTIMIZATION; OXYGEN; OXYGENATION; PLASMA WAVES;

OXYGENATORS;

EID: 71049134023     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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11. eff modulation, as it shifts both devices in the same Vg direction, whereas thickness changes shift n- and pFETs in opposite directions.