Migrating from Planar to FinFET for further CMOS scaling: SOI or bulk?

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 85-88

  Chiarella, T ^a   Witters, L ^a   Mercha, A ^a   Kerner, C ^a   Dittrich, R ^b   Rakowski, M ^a   Ortolland, C ^a   Ragnarsson, L A ^a   Parvais, B ^a   De Keersgieter, A ^a   Kubicek, S ^a   Redolfi, A ^a   Rooyackers, R ^a   Vrancken, C ^a   Brus, S ^a   Lauwers, A ^a   Absil, P ^a   Biesemans, S ^a   Hoffmann, T ^a  

^a IMEC   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SUBSTRATES; CMOS SCALING; FIGURES OF MERITS; FINFETS; INTRINSIC DEVICE; JUNCTION CAPACITANCES; PARASITICS; RING OSCILLATOR; SRAM CELL; VOLTAGE GAIN;

FIELD EFFECT TRANSISTORS;

SOLS;

EID: 72849127601     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331587     Document Type: Conference Paper

References (8)

1. B. Parvais et al, "The device architecture dilemma for cmos technologies: opportunities & challenges of finFET over planar MOSFET", VLSI-TSA 2009, (in press).
2. M. van Dal et al, "Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography", VLSI 2007, pp, 110-111.
3. The International Technology Roadmap for Semiconductors (ITRS), 2008, http://www.itrs.net/ .
4. A. Veloso et al, "Flexible and Robust Capping-Metal Gate Integration Technology enabling multiple-VT CMOS in MuGFETs", VLSI 2008, pp. 14-15.
5. S. Kubicek et al, "Strain enhanced Low-VT CMOS featuring La/AI-doped HfSiO/TaC and 10ps Inverter Delay, VLSI 2008, pp.130-131.
6. N. Collaert et aI, "Low-voltage 6T FinFET SRAM cell with high SNM using HfSiON/TiN gate stack, fin widths down to 10nm and 30nm gate length", ICICDT 2008, pp. 59-62.
7. M. Guillorn et aI, "FinFET Performance Advantage at 22nm: An AC perspective", VLSI 2008, pp. 12-13.
8. W. Jin et al, "Self-heating characterization for SOl MOSFET based on AC output conductance" , IEDM 1999, pp. 175-178.