SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1461-1463

Shifting Schottky barrier heights with ultra-thin dielectric layers

(3) Lin, L a Robertson, J a Clark, S J b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b DURHAM UNIVERSITY (United Kingdom)

Author keywords

Calculation; Contact resistance; Germanium; Insulator; Metal induced gap states; Nanowires; Schottky barrier

Indexed keywords

BAND OFFSETS; DIELECTRIC LAYER; INSULATOR; INTERFACIAL DIPOLE LAYERS; METAL INDUCED GAP STATES; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; ULTRA-THIN;

CONTACT RESISTANCE; DIELECTRIC MATERIALS; FERMI LEVEL; GERMANIUM; NANOWIRES; SCHOTTKY BARRIER DIODES; SILICON NITRIDE;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 79958036671 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.049 Document Type: Conference Paper

Times cited : (32)

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