Germanium surface and interfaces (Invited Paper)

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1577-1581

  Dimoulas, A ^a   Tsipas, P ^a  

^a MBE Laboratory   (Greece)

Author keywords

Dangling bonds; Field effect transistors; Germanium; Interfaces

Indexed keywords

CHARGE NEUTRALITY; ELECTRICAL CHARACTERISTIC; EQUIVALENT OXIDE THICKNESS; GATE BIAS; GERMANIUM SURFACE; INTERFACE STATE DENSITY; INTERFACES; N-CHANNEL; N-TYPE GE; NEGATIVE CHARGE;

DANGLING BONDS; ELECTRONIC PROPERTIES; GERMANIUM; MESFET DEVICES; SURFACE DEFECTS;

FIELD EFFECT TRANSISTORS;

EID: 67349253558     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.055     Document Type: Article

References (22)

1. J. Mitard, B. De Jaeger, F.E. Leys, G. Hellings, K. Martens, G. Eneman, D.P. Brunco, R. Loo, J.C. Lin, D. Shamiryan, T. Vandeweyer, G. Winderickx, E. Vrancken, C.H. Yu, K. De Meyer, M. Caymax, L. Pantisano, M. Meuris, M.M. Heyns, in: IEDM Technol. Dig., 2008.
2. Brattain W., and Bardeen J. Phys. Rev. 74 (1948) 231
3. A. Many, Y. Goldstein, N.B. Grover, Semiconductor Surfaces, North Holland, Amsterdam, 1965, and references therein.
4. Clarysse T., Eyben P., Janssens T., Hoflijk I., Vanhaeren D., Satta A., Meuris M., Vandervost W., Bogdanowicz J., and Raskin G. J. Vac. Sci. Technol. B 24 (2006) 381
5. Dimoulas A., Tsipas P., Sotiropoulos A., and Evangelou E.K. Appl. Phys. Lett. 89 (2006) 250110
6. Nishimura T., Kita K., and Toriumi A. Appl. Phys. Lett. 91 (2007) 123123
7. Houssa M., Pourtois G., Caymax M., Meuris M., Heyns M.M., Afanas'ev V.V., and Stesmans A. Appl. Phys. Lett. 93 (2008) 161909
8. Weber J.R., Janotti A., Rinke P., and Van de Walle C.G. Appl. Phys. Lett. 91 (2007) 142101
9. Broqvist P., Alkauskas A., and Pasquarello A. Phys. Rev. B 78 (2008) 075203
10. Afanasev V.V., Fedorenko Y.G., and Stesmans A. Appl. Phys. Lett. 87 (2005) 032107
11. Baldovino S., Molle A., and Fanciulli M. Appl. Phys. Lett. 93 (2008) 242105
12. Tsipas P., and Dimoulas A. Appl. Phys. Lett. 94 (2009) 012114
13. Uren M.J., Stathis J.H., and Cartier E. J. Appl. Phys. 80 (1996) 3915
14. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), J. Willey & Sons, New York
15. Ritenour A., Khakifirooz A., Antoniadis D.A., Lei R.Z., Tsai W., Dimoulas A., Mavrou G., and Panayiotatos Y. Appl. Phys. Lett. 88 (2006) 132107
16. P. Zimmerman, G. Nicholas, B. De Jaeger, B. Kaczer, A. Stesmans, L.-A. Ragnarsson, D.P. Brunco, F.E. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, M.M. Heyns, IEDM, 11-13 December, 2006, pp. 1-4.
17. Joshi S., Krug C., Heh D., Na H.J., Harris H.R., Oh J.W., Kirsch P.D., Majhi P., Lee B.H., Tseng H.-H., Jammy R., Lee J.C., and Banerjee S.K. IEEE Electron. Dev. Lett. 28 (2007) 308
18. K. Romanjek, L. Hutin, C. Le Royer, A. Pouydebasque, M.-A. Jaud, C. Tabone, E. Augendre, L. Sanchez, J.-M. Hartman, H. Grampeix, V. Mazzocchi, S. Soliveres, R. Truche, L. Clavelier, P. Scheiblin, X. Garros, G. Reimbold, M. Vinet, F. Boulanger, S. Deleonibus, in: Proc. ESSDERC, 2008, p. 75.
19. D. Kuzum, A.J. Pethe, T. Krishnamohan, Y. Oshima, Y. Sun, J.P. McVittie, P.A. Pianetta, P.C. McIntyre, K. Saraswat, in: IEDM Technol. Dig., 2007, pp. 723-726.
20. A.C. Kummel, in: 214th ECS Meeting, SiGe Symposium, Honolulu, Hawaii, October 12-17, 2008.
21. Dimoulas A., Panayiotatos Y., Tsipas P., Galata S., Mavrou G., Sotiropoulos A., Marchiori C., Rossel C., Webb D., Andersson C., Soussa M., Richter M., and Fompeyrine J. ECS Trans. 16 5 (2008) 295
22. Romanjek K., Augendre E., van Den Daele W., Grandchamp B., Sanchez L., Le Royer C., Hartmann J.-M., Ghyselen B., Guiot E., Bourdelle K., Cristoloveanu S., Boulanger F., and Clavelier L. Microelectron. Eng. 86 (2009) 1585