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Physical Review B

Volumn 43, Issue 9, 1991, Pages 7347-7350

Tuning band offsets at semiconductor interfaces by intralayer deposition

(4) Peressi, Maria a Baroni, Stefano a Resta, Raffaele a Baldereschi, Alfonso b

a SISSA (Italy)

b INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 35949012124 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.43.7347 Document Type: Article

Times cited : (99)

References (18)

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16
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- The value of the host dielectric constant used in this case is the average between the theoretical dielectric constants of AlAs and GaAs: εh-1=εGaAs-1+εAlAs-1.

17
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- For Gesub x(GaSb)1-x/2, for instance, an order disorder transition is observed at xc sim 0.5. See, e.g.
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18
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- The dielectric constants calculated with the same kinetic energy cutoff and an equivalent number of special points as used here are 9.2, 7.7, 12.8, and 10.8 for GaAs, AlAs, Ge, and Si, while the experimental values are 10.9, 8.2, 15.4, and 11.4, respectively.

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