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Volumn 87, Issue 10, 2010, Pages 1935-1940

Effect of series resistance on the electrical characteristics and interface state energy distributions of Sn/p-Si (MS) Schottky diodes

Author keywords

Barrier height; Ideality factor; Interface state density; MS contact; Series resistance; Si

Indexed keywords

BIAS VOLTAGE; CAPACITANCE; DIODES; ELECTRIC RESISTANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON; TIN;

EID: 79958018767     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.11.168     Document Type: Article
Times cited : (55)

References (52)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.