Analysis of sulfide layer on gallium arsenide using X-ray photoelectron spectroscopy

Spectrochimica acta, Part B: Atomic spectroscopy

Volumn 55, Issue 7, 2000, Pages 991-996

  Yüzer, Hayrettin ^a   Dogan, Hacer ^a   Köroglu, Jülide ^a   Kocakuşak, Sidika ^a  

^a MATERIALS INSTITUTE   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CRYSTAL ATOMIC STRUCTURE; ELECTRIC INSULATORS; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SULFUR COMPOUNDS; THICK FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIUM POLYSULFIDE ANODIZATION; AMORPHOUS SULFIDE LAYER; ELECTROCHEMICAL PASSIVATION;

SURFACE CHEMISTRY;

EID: 0343391175     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0584-8547(00)00230-5     Document Type: Article

References (5)

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