Current-voltage characteristics of Au/GaN/GaAs structure

Physica B: Condensed Matter

Volumn 403, Issue 1, 2008, Pages 61-66

  Ebeoǧlu, Mehmet Ali ^a  

^a DUMLUPINAR UNIVERSITY   (Turkey)

Author keywords

GaAs; GaN; Ideality factor; Interface states distribution; Nitridation; Schottky barrier height; Schottky contact; Series resistance

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC PROPERTIES; ENERGY BARRIERS; NITRIDATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

IDEALITY FACTOR; INTERFACE STATES DISTRIBUTION; SCHOTTKY BARRIER HEIGHT; SCHOTTKY CONTACT; SERIES RESISTANCE;

GALLIUM NITRIDE;

EID: 36549000238     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.008     Document Type: Article

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