Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique

Solid-State Electronics

Volumn 50, Issue 7-8, 2006, Pages 1269-1275

  Saha, A R ^a   Chattopadhyay, S ^a,b   Das, R ^a   Bose, C ^c   Maiti, C K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c JADAVPUR UNIVERSITY   (India)

Author keywords

Doping profile; Heterojunction; Ni Silicide; Schottky diode; Strained Si

Indexed keywords

ANNEALING; CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS;

DOPING PROFILE; NI-SILICIDE; STRAINED-SI;

SCHOTTKY BARRIER DIODES;

EID: 33747171125     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.06.001     Document Type: Article

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