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Volumn 58, Issue 6, 2011, Pages 1597-1607

Toward system on chip (SoC) development using FinFET technology: Challenges, solutions, process co-development & optimization guidelines

Author keywords

Extremely thin SOI (ETSOI); FinFET; implant free process; ion implantation and system on chip (SoC); process co optimization; scaling

Indexed keywords

FINFET; IMPLANT-FREE PROCESS; PROCESS CO-OPTIMIZATION; SCALING; THIN SOI;

EID: 79957660056     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2123100     Document Type: Article
Times cited : (39)

References (23)
  • 2
    • 70350633027 scopus 로고    scopus 로고
    • Nanowire FETs for low power CMOS applications featuring novel gate-all-around single metal FUSI gates with dual Φm and VT tune-ability
    • Y. Jiang, T. Y. Liow, N. Singh, L. H. Tan, G. Q. Lo, D. Chan, and D. L. Kwong, "Nanowire FETs for low power CMOS applications featuring novel gate-all-around single metal FUSI gates with dual Φm and VT tune-ability", in IEDM Tech. Dig., 2008, pp. 1-4.
    • (2008) IEDM Tech. Dig. , pp. 1-4
    • Jiang, Y.1    Liow, T.Y.2    Singh, N.3    Tan, L.H.4    Lo, G.Q.5    Chan, D.6    Kwong, D.L.7
  • 7
    • 34249875970 scopus 로고    scopus 로고
    • Device-optimization technique for robust and low-power FinFET SRAM design in NanoScale era
    • DOI 10.1109/TED.2007.895879
    • A. Bansal, S. Mukhopadhyay, and K. Roy, "Device-optimization technique for robust and low-power FinFET SRAM design in nano-scale era", IEEE Trans. Electron Devices, vol. 54, no. 6, pp. 1409-1419, Jun. 2007. (Pubitemid 46864775)
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.6 , pp. 1409-1419
    • Bansal, A.1    Mukhopadhyay, S.2    Roy, K.3
  • 9
    • 37549024549 scopus 로고    scopus 로고
    • Gate fringeinduced barrier lowering in underlap FinFET structures and its optimization
    • Jan.
    • A. B. Sachid, C. R. Manoj, D. K. Sharma, and V. R. Rao, "Gate fringeinduced barrier lowering in underlap FinFET structures and its optimization", IEEE Electron Device Lett., vol. 29, no. 1, pp. 128-130, Jan. 2008.
    • (2008) IEEE Electron. Device Lett. , vol.29 , Issue.1 , pp. 128-130
    • Sachid, A.B.1    Manoj, C.R.2    Sharma, D.K.3    Rao, V.R.4
  • 10
    • 77952405133 scopus 로고    scopus 로고
    • Analog and RF design issues in high-κ & multi-gate CMOS technologies
    • M. Fulde, D. Schmitt-Landsiedel, and G. Knoblinger, "Analog and RF design issues in high-κ & multi-gate CMOS technologies", in IEDM Tech. Dig., 2009, p. 447.
    • (2009) IEDM Tech. Dig. , pp. 447
    • Fulde, M.1    Schmitt-Landsiedel, D.2    Knoblinger, G.3
  • 11
    • 77952326878 scopus 로고    scopus 로고
    • Design challenges for 22 nm CMOS and beyond
    • S. Borkar, "Design challenges for 22 nm CMOS and beyond", in IEDM Te ch. D i g., 2009, p. 1.
    • (2009) IEDM Te Ch. D I g. , pp. 1
    • Borkar, S.1
  • 14
    • 77952367518 scopus 로고    scopus 로고
    • Co-optimizing process development, layout and circuit design for cost-effective 22 nm technology platform
    • K. Michaels, "Co-optimizing process development, layout and circuit design for cost-effective 22 nm technology platform", in IEDM Tech. Dig., 2009, p. 1.
    • (2009) IEDM Tech. Dig. , pp. 1
    • Michaels, K.1
  • 15
    • 77952404226 scopus 로고    scopus 로고
    • Design and process co-optimization for 28 nm/22 nm and beyond-A foundry's perspective
    • C. Hou, "Design and process co-optimization for 28 nm/22 nm and beyond-A foundry's perspective", in IEDM Tech. Dig., 2009, p. 1.
    • (2009) IEDM Tech. Dig. , pp. 1
    • Hou, C.1
  • 17
    • 79957660735 scopus 로고    scopus 로고
    • Synopsys TCAD suite, Version 2010.03
    • Synopsys TCAD suite, Version 2010.03.
  • 19
    • 32044450519 scopus 로고    scopus 로고
    • Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results
    • DOI 10.1016/j.mee.2005.08.003, PII S0167931705004363
    • R. Granzner, V. M. Polyakov, F. Schwierz, M. Kittler, R. J. Luyken, W. Rösner, and M. Städele, "Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results", Microelectron. Eng., vol. 83, no. 2, pp. 241-246, Feb. 2006. (Pubitemid 43199284)
    • (2006) Microelectronic Engineering , vol.83 , Issue.2 , pp. 241-246
    • Granzner, R.1    Polyakov, V.M.2    Schwierz, F.3    Kittler, M.4    Luyken, R.J.5    Rosner, W.6    Stadele, M.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.