Demonstration of scaled 0.099μ2 FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Veloso, A ^a   Demuynck, S ^a   Ercken, M ^a   Goethals, A M ^a   Locorotondo, S ^a   Lazzarino, F ^a   Altamirano, E ^a   Huffman, C ^a   De Keersgieter, A ^a   Brus, S ^a   Dem, M ^a   Struyf, H ^a   De Backer, J ^a   Hermans, J ^a   Delvaux, C ^a   Baudemprez, B ^a   Vandeweyer, T ^a   Van Roey, F ^a   Baerts, C ^a   Goossens, D ^a   Dekkers, H ^a   Ong, P ^a   Heylen, N ^a   Kellens, K ^a   Volders, H ^a   Hikavyy, A ^a   Vrancken, C ^a   Rakowski, M ^a   Verhaegen, S ^a   Dusa, M ^b   Romijn, L ^b   Pigneret, C ^b   Van Dijk, A ^b   Schreutelkamp, R ^c   Cockburn, A ^c   Gravey, V ^c   Meiling, H ^b   Hultermans, B ^b   Lok, S ^b   Shah, K ^d   Rajagopalan, R ^d   Gelatos, J ^d   Richard, O ^a   Bender, H ^a   Vandenberghe, G ^a   Beyer, G P ^a   Absil, P ^a   Hoffmann, T ^a   Ronse, K ^a   Biesemans, S ^a   more..

^a IMEC ^*  (United States)

^b ASML   (Netherlands)

^c Applied Materials Belgium   (Belgium)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

6T-SRAM; CELL TRANSISTOR; DEFECT-FREE GROWTH; DENSE ARRAYS; ELECTRICAL CHARACTERISTIC; EUV LITHOGRAPHY; FINFETS; FULL-FIELD; HIGH ASPECT RATIO; LOWER COST; METAL GATE; METALLIZATIONS; PATTERNING TECHNOLOGY; PROCESS LATITUDES; SRAM CELL; ULTRA-THIN;

ASPECT RATIO; ELECTRON DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICIDES; ULTRAVIOLET DEVICES;

STATIC RANDOM ACCESS STORAGE;

EID: 77952346796     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424365     Document Type: Conference Paper

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