Analog and RF design issues in high-k & multi-gate CMOS technologies

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Fulde, M ^a   Schmitt Landsiedel, D ^b   Knoblinger, G ^a  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT PERFORMANCE; CMOS TECHNOLOGY; DESIGN ISSUES; METAL GATE; MIXED SIGNAL; MULTI-GATE FETS; REVOLUTIONARY CHANGES; RF APPLICATIONS; RF DESIGN; RF DEVICES; SCALING DOWN;

ELECTRON DEVICES;

EID: 77952405133     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424326     Document Type: Conference Paper

References (7)

1. G. Ribes et al., IEEE Trans. Dev. Mater. Rel., 2005
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3. M. Fulde, Springer, 2009
4. D. Ponton et al., Proc. ESSCIRC, 2009
5. N. Collaert et al., Proc. ICICDT, 2008
6. G. Knoblinger et al., Proc. IEEE SOI Conf., 2007
7. M. Fulde et al., Proc. IEEE SOI Conf., 2008