Surface potential measurements of AlGaNGaN high-electron-mobility transistors by Kelvin probe force microscopy

Applied Physics Letters

Volumn 85, Issue 24, 2004, Pages 6028-6029

  Nakagami, Kohei ^a   Ohno, Yutaka ^a   Kishimoto, Shigeru ^a   Maezawa, Koichi ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRONS; GALLIUM NITRIDE; MICROSCOPIC EXAMINATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SURFACE PROPERTIES;

DRAIN CURRENTS; EPITAXIAL LAYER STRUCTURES; KELVIN PROBE FORCE MICROSCOPY; SURFACE POTENTIAL MEASUREMENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 18144379705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1835551     Document Type: Article

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