50 nm In0.8GaP/In0.4AlAs/In0.35GaAs metamorphic HEMTs with ZEP/UV5 bilayer T-gate

Electronics Letters

Volumn 43, Issue 16, 2007, Pages 895-897

  Kim, S ^a   Koh, Y ^a   Seo, K ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

EXTRINSIC TRANSCONDUCTANCE; OSCILLATION FREQUENCIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 34547697443     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071551     Document Type: Article

References (7)

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2. Whelan, C.S., Marsh, P.F., Hoke, W.E., McTaggart, R.A., McCarroll, C.P., and Kazior, T.E.: ' GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications ', Proc. Int. Conf. Indium Phosphide and Related Materials, May, 2000, p. 349-352
3. Kim, S., Lee, K., Lee, J., and Seo, K.: ' High-performance 0.1-m In0.4AlAs/In0.35GaAs MHEMTs with Ar plasma treatment ', IEEE Electron Device Lett., 2005, 26, (11), p. 787-789 10.1109/LED.2005.857723 0741-3106
4. Wakita, A.S., Su, C.-Y., Rohdin, H., Liu, H.-Y., Lee, A., Seeger, J., and Robbins, V.M.: ' Novel highyield trilayer resist process for 0.1m T-gate fabrication ', J. Vac. Sci. Technol. B, 1995, 13, (6), p. 2725-2728 10.1116/1.588253
5. Samoto, N., Makino, Y., Onda, K., Mizuki, E., and Itoh, T.: ' A novel electron-beam exposure technique for 0.1-m T-shaped gate fabrication ', J. Vac. Sci. Technol. B, 1990, 8, (6), p. 1335-1338 10.1116/1.584914
6. Chen, Y., MacIntyre, D., and Thoms, S.: ' T-gate fabrication using a ZEP520A/UVIII bilayer ', Microelectron. Eng, 2001, 57-58, p. 939-943 0167-9317
7. Kim, S., Jang, K., Seol, G., Her, J., and Seo, K.: ' Passivation effects of 100nm In0.4AlAs/In0.35GaAs metamorphic high-electron-mobility transistors with a silicon nitride layer by remote plasma-enhanced chemical vapor deposition ', Jpn. J. Appl. Phys., 2007, 46, (4B), p. 2341-2343 0021-4922