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Volumn 310, Issue 23, 2008, Pages 5003-5006

Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanol

(10) Nishimoto, Naoki a Yamamae, Takahiro b Kaku, Takashi b Matsuo, Yuki b Senthilkumar, Kasilingam b Senthilkumar, Obuliraj b Okamoto, Jun b Yamada, Yasuji b Kubo, Shugo b Fujita, Yasuhisa b

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b SHIMANE UNIVERSITY (Japan)

Author keywords

A1. Characterization; A1. Doping; A2. Metalorganic vapor phase epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

ALCOHOLS; CRYSTAL GROWTH; DISKS (MACHINE COMPONENTS); ELECTRIC CURRENTS; FILMS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELD EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; OXIDE MINERALS; OXYGEN; QUARTZ; ROTATING DISKS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; THERMOELECTRIC EQUIPMENT; THICK FILMS; THIN FILMS; TRANSITION METAL COMPOUNDS; VAPORS; ZINC; ZINC ALLOYS; ZINC COMPOUNDS; ZINC OXIDE;

A1. CHARACTERIZATION; A1. DOPING; A2. METALORGANIC VAPOR PHASE EPITAXY; B1. ZINC COMPOUNDS; B2. SEMICONDUCTING II-VI MATERIALS;

GALLIUM ALLOYS;

EID: 56549088781 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.07.005 Document Type: Article

Times cited : (18)

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