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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 1, 2010, Pages 125-129

Optical investigation of an AlGaN/GaN interface with the presence of a two-dimensional electron gas

(7) Lin, D Y a Wu, J D b Hung, C C a Lu, C T a Huang, Y S b Liang, C T c Chen, N C d

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Taiwan)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

d CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; ALGAN LAYERS; ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; ALLOY COMPOSITIONS; BAND GAP ENERGY; DC BIAS; ELECTROREFLECTANCE; ER SPECTRA; FRANZ-KELDYSH OSCILLATIONS; GAN LAYERS; GAP TRANSITION; LAYER THICKNESS; OPTICAL ABSORPTION; OPTICAL INVESTIGATION; SURFACE ELECTRIC FIELDS; TWO-DIMENSIONAL ELECTRON GAS (2DEG); X-RAY RECIPROCAL SPACE MAPPING;

ABSORPTION SPECTROSCOPY; ALUMINUM; CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRON GAS; ENERGY GAP; GALLIUM ALLOYS; GALLIUM NITRIDE; PHASE INTERFACES; TWO DIMENSIONAL;

TWO DIMENSIONAL ELECTRON GAS;

EID: 78649925743 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2010.06.029 Document Type: Article

Times cited : (5)

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