Microstructural characteristics and crystallographic evolutions of Ga-doped ZnO films grown on sapphire substrates at high temperatures by RF magnetron sputtering

Journal of Crystal Growth

Volumn 311, Issue 22, 2009, Pages 4641-4646

  Lee, Ju Ho ^a   Kim, Young Yi ^b   Cho, Hyung Koun ^b   Lee, Jeong Yong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

A1. Crystal morphology; A1. Doping; A1. Stresses; A3. Physical vapor deposition processes; B1. Zinc compounds

Indexed keywords

A1. CRYSTAL MORPHOLOGY; A1. DOPING; A1. STRESSES; A3. PHYSICAL VAPOR DEPOSITION PROCESSES; B1. ZINC COMPOUNDS;

CORUNDUM; DOPING (ADDITIVES); EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM; GALLIUM ALLOYS; GRAIN BOUNDARIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC FILMS; MAGNETRON SPUTTERING; MAGNETRONS; MORPHOLOGY; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; SULFUR COMPOUNDS; SURFACE RELAXATION; TRANSITION METAL COMPOUNDS; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

FILM GROWTH;

EID: 70350115971     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.09.005     Document Type: Article

References (16)

1. Bagnall D.M., Chen Y.F., Zhu Z., Yao T., Koyama S., Shen M.Y., and Goto T. Appl. Phys. Lett. 70 (1997) 2230
2. Chen M., Pei Z.L., Sun C., Gong J., Huang R.F., and Wen L.S. Mater. Sci. Eng. B 85 (2001) 212
3. Hiramatsu M., Imaeda K., Horio N., and Nawata M. J. Vac. Sci. Technol. A 16 2 (1998) 669
4. Gómez H., and de la L. Olvera M. Mater. Sci. Eng. B 134 (2006) 20
5. Khranovskyy V., Grossner U., Nilsen O., Lazorenko V., Lashkarev G.V., Svensson B.G., and Yakimova R. Thin Solid Films 515 (2006) 472
6. Park H.C., Byun D., Angadi B., Park D.H., Choi W.K., Choi J.W., and Jung Y.S. J. Appl. Phys. 102 (2007) 073114
7. Chen Y.F., Bagnall D.M., Koh H.J., Park K.T., Hiraga K., Zhu Z., and Yao T. J. Appl. Phys. 84 (1998) 3912
8. Gerthsen D., Litvinov D., Gruber Th., Kirchner C., and Waag A. Appl. Phys. Lett. 81 (2002) 3972
9. Yu X., Ma J., Ji F., Wang Y., Zhang X., Cheng C., and Ma H. J. Cryst. Growth 274 (2005) 474
10. Bhosle V., Tiwari A., and Narayan J. J. Appl. Phys. 100 (2006) 033713
11. Desjardins P., Marchand H., Isnard L., and Masut R.A. J. Appl. Phys. 81 (1997) 3501
12. Mitsuhara M., Ogasawara M., and Sugiura H. J. Cryst. Growth 210 (2000) 463
13. Hartmann J.M., Gallas B., Zhang J., and Harris J.J. Semicond. Sci. Technol. 15 (2000) 370
14. Cho H.K., Lee J.Y., and Yang G.M. Appl. Phys. Lett. 80 (2002) 1370
15. Kim M.Y., Hong Y.H., Yoo J.K., Yi G.C., park G.S., Kong K.J., and Chang H.J. Phys. Stat. Sol. (RRL) 2 (2008) 197
16. Cho H.K., Lee J.Y., Yang G.M., and Kim C.S. Appl. Phys. Lett. 79 (2001) 215