Effects of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering method

Applied Surface Science

Volumn 255, Issue 17, 2009, Pages 7532-7536

  Park, Yu Jin ^a   Kim, Hyuk Nyun ^a   Shin, Hyun Ho ^a  

^a LG Display Co Ltd   (South Korea)

Author keywords

Atomic arrangement; Crystallinity; Ga doped ZnO; Grain growth; Transmission electron microscopy

Indexed keywords

DEFECT DENSITY; GALLIUM COMPOUNDS; GRAIN GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; STACKING FAULTS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE; ZINC SULFIDE;

ATOMIC ARRANGEMENT; CRYSTALLINITIES; DEPOSITION TEMPERATURES; GA-DOPED ZNO; MICRO-STRUCTURAL CHARACTERIZATION; SPUTTERING DEPOSITION; SPUTTERING METHODS; WURTZITE STRUCTURE;

DEPOSITION;

EID: 67349264927     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.04.022     Document Type: Article

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