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Volumn 340-342, Issue , 2003, Pages 32-38

Electrical and optical properties of defects and impurities in ZnO

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTROLUMINESCENCE; ELECTRON IRRADIATION; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HALL EFFECT; LOW TEMPERATURE EFFECTS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION EFFECTS; SUBSTRATES;

EID: 0347134695     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.188     Document Type: Conference Paper
Times cited : (144)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.