Electrical and optical properties of defects and impurities in ZnO

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 32-38

  Look, D C ^a,b   Coskun C ^b,c   Claflin, B ^a,b   Farlow, G C ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CONCENTRATION (PROCESS); CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTROLUMINESCENCE; ELECTRON IRRADIATION; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HALL EFFECT; LOW TEMPERATURE EFFECTS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POINT DEFECTS; RADIATION EFFECTS; SUBSTRATES;

ACCEPTOR DOPANTS; DEFECT ANNIHILATIONS;

ZINC OXIDE;

EID: 0347134695     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.188     Document Type: Conference Paper

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