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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1911-1915

High-quality silicon oxide film formed by diffusion region plasma enhanced chemical vapor deposition and oxygen radical treatment using microwave-excited high-density plasma

(7) Tanaka, Hiroaki a Chuanjie, Zhong a Hayakawa, Yukio a Hirayama, Masaki a Teramoto, Akinobu a Sugawa, Shigetoshi a Ohmi, Tadahiro a

a TOHOKU UNIVERSITY (Japan)

Author keywords

High density plasma; Low temperature; PECVD; Post treatment; Silicon oxide; Silicon oxide on poly Si

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC FIELDS; GRAIN SIZE AND SHAPE; KRYPTON; LEAKAGE CURRENTS; OXYGEN; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE THERMAL OXIDE FILM; MICROWAVE-EXCITED HIGH-DENSITY PLASMA; OXYGEN RADICAL TREATMENT; SILICON OXIDE FILM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0038686578 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.1911 Document Type: Article

Times cited : (27)

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