Damageless Cu chemical mechanical polishing for porous SiOC/Cu interconnects

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2615-2619

  Kondo, Seiichi ^a   Fukaya, Kouichi ^a   Yamada, Kouji ^a   Miyazaki, Tadakazu ^b   Fujita, Masahisa ^b   Abe, Daisuke ^c   Kunisaki, Shuuji ^c   Enomoto, Taro ^c   Tominaga, Shigeru ^c  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b SANYO CHEMICAL INDUSTRIES LTD   (Japan)

^c Tokyo Roki Co Ltd   (Japan)

Author keywords

Chemical mechanical polishing; Cleaning chemical; Cu interconnect; Porous SiOC film

Indexed keywords

CATHODES; CHEMICAL REACTIONS; COPPER; DIFFUSION; POROUS MATERIALS; SURFACE ACTIVE AGENTS; WETTING;

CARBON MATERIAL; ELECTRO-CMP (E-CMP) TECHNOLOGY; HYDROPHOBIC SIOC FILM SURFACE; PLANARIZATION PERFORMANCE;

POLISHING;

EID: 34548846136     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.036     Document Type: Article

References (5)

1. M. Matsuura, K. Goto, M. Matsumoto, N. Miura, T. Furusawa, A. Andatsu, K. Yonekura, H. Chibahara, A. Ohsaki, in: Proceedings of Advanced Metallization Conference: Asian Session (ADMETA), 2003, p. 120.
2. S. Kondo, B.U. Yoon, S.G. Lee, S. Tokitoh, K. Misawa, T. Yoshie, N. Ohashi, N. Kobayashi, in: Proceedings of VLSI Technology Symposium, 2004, p. 86.
3. S. Kondo, K. Fukaya, N. Ohashi, T. Miyazaki, H. Nagano, Y. Wada, T. Ishibashi, M. Kato, K. Yoneda, E. Soda, S. Nakao, K. Ishigami, N. Kobayashi, in: Proceedings of International Interconnect Technology Conference (IITC), 2006, p. 164.
4. S. Tokitoh, S. Kondo, B.U. Yoon, A. Namiki, K. Inukai, K. Misawa, S. Sone, H.J. Shin, Y. Matsubara, N. Ohashi, N. Kobayashi, in: Proceedings of International Interconnect Technology Conference (IITC), 2004, p. 130.
5. S. Kondo, S. Tominaga, A. Namiki, K. Yamada, D. Abe, K. Fukaya, M. Shimada, N. Kobayashi, in: Proceedings of International Interconnect Technology Conference (IITC), 2005, p. 203.