High-speed damage-free contact hole etching using dual shower head microwave-excited high-density-plasma equipment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1784-1787

  Goto, Tetsuya ^a   Yamauchi, Hiroshi ^a   Kato, Takeyoshi ^a   Terasaki, Masato ^a   Teramoto, Akinobu ^a   Hlrayama, Masaki ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Carrier deactivations; Damage free etching; Microwave excited plasma; Reactive ion etching; Shower head; SiO2 etching

Indexed keywords

ELECTRIC FIELD EFFECTS; FLOW OF FLUIDS; ION BOMBARDMENT; ION IMPLANTATION; MAGNETS; PLASMAS; REACTIVE ION ETCHING; SILICA;

CARRIER DEACTIVATION; DAMAGE-FREE ETCHING; MICROWAVE-EXCITED PLASMA; SHOWER HEAD; SIO2 ETCHING;

MICROWAVES;

EID: 3142635078     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1784     Document Type: Conference Paper

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