A new microwave-excited plasma etching equipment for separating plasma excited region from etching process region

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1887-1891

  Goto, Tetsuya ^a   Hirayama, Masaki ^a   Yamauchi, Hiroshi ^a   Moriguchi, Makoto ^a   Sugawa, Shigetoshi ^a   Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Excess decomposition; Microwave excited plasma; Reactive ion etching; RLSA; Shower head; SiO2 etching

Indexed keywords

DECOMPOSITION; ELECTRONS; EQUIPMENT; FLUORINE COMPOUNDS; IONS; MICROWAVES; PLASMA DENSITY; PLASMA SOURCES; SILICA; SLOT ANTENNAS; TEMPERATURE;

EXCESS DECOMPOSITION; HIGH-DENSITY PLASMA SOURCE; LOW-ELECTRON TEMPERATURE; MICROWAVE-EXCITED PLASMA ETCHING EQUIPMENT; RADIAL LINE SLOT ANTENNA; SHOWER HEAD;

PLASMA ETCHING;

EID: 0038348100     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1887     Document Type: Article

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