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Volumn 106, Issue 10, 2009, Pages

Simultaneous low-frequency noise characterization of gate and drain currents in AlGaN/GaN high electron mobility transistors

(2) Rao, Hemant a Bosman, Gijs a

a J Crayton Pruitt Family Department of Biomedical Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN LAYERS; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; FREQUENCY DOMAINS; GATE CURRENT NOISE; HIGH QUALITY; HOOGE PARAMETERS; LORENTZIANS; LOW-FREQUENCY NOISE; NOISE SPECTRA; RANDOM TELEGRAPH SIGNAL NOISE; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SHEET CARRIER DENSITIES; SWITCHING NOISE; TIME DOMAIN; WEAK CORRELATION;

DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; POINT DEFECTS; TELEGRAPH; THERMAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 71749094916 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3259437 Document Type: Article

Times cited : (30)

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