Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 5, 2011, Pages 1439-1444

  Novikov, S V ^a   Foxon, C T ^a   Kent, A J ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

Bulk crystal growth; GaN based structures; MBE

Indexed keywords

ALN; BULK CRYSTAL GROWTH; BULK CRYSTALS; COMPOSITION RANGES; EPITAXIAL TECHNIQUES; GAN FILM; GAN LAYERS; GAN-BASED STRUCTURES; MBE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SEMI-INSULATING GAAS; THIN LAYERS; ZINC-BLENDE;

CRYSTALLIZATION; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; SUBSTRATES; ZINC;

GALLIUM ALLOYS;

EID: 79955630734     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000736     Document Type: Article

References (27)

1. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, J. Phys.: Condens. Matter 14, 3399 (2002).
2. P. Waltereit, O. Brandt, M. Ramsteiner, R. Uecker, P. Reiche, and K. H. Ploog, J. Cryst. Growth 218, 143 (2000).
3. S. Tripathy, R. K. Soni, H. Asahi, K. Iwata, R. Kuroiwa, K. Asami, and S. Gonda, J. Appl. Phys. 85, 8386 (1999).
4. B. A. Haskell, F. Wu, S. Matsuda, M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Appl. Phys. Lett. 83, 1554 (2003).
5. L. Shunfeng, J. Schomann, D. J. As, and K. Lischka, Appl. Phys. Lett. 90, 071903 (2007).
6. K. T. Delaney, P. Rinke, and C. G. Van de Walle, Appl. Phys. Lett. 94, 191109 (2009).
7. N. Zainal, P. Walker, and A. J. Kent, Phys. Status Solidi C 7, 2262 (2010).
8. H. Tsuchiya, K. Sunaba, T. Suemasu, and F. Hasegawa, J. Cryst. Growth 198/199, 1056 (1999).
9. S. V. Novikov, N. M. Stanton, R. P. Campion, R. D. Morris, H. L. Geen, C. T. Foxon, and A. J. Kent, Semicond. Sci. Technol. 23, 015018 (2008).
10. S. V. Novikov, N. Zainal, A. V. Akimov, C. R. Staddon, A. J. Kent, and C. T. Foxon, J. Vac. Sci. Technol. B 28, C3B1 (2010).
11. S. V. Novikov, N. M. Stanton, R. P. Campion, C. T. Foxon, and A. J. Kent, J. Cryst. Growth 310, 3964 (2008).
12. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. 88, 1855 (2000).
13. H. Yaguchi, J. Wu, H. Akiyama, M. Baba, K. Onabe, and Y. Shiraki, Phys. Status Solidi B 216, 237 (1999).
14. A. Philippe, C. Bru-Chevallier, M. Vernay, G. Guillot, J. Hubner, B. Daudin, and G. Feuillet, Mater. Sci. Eng. B 59, 168 (1999).
15. K. Lischka, Braz. J. Phys. 27, 80 (1997).
16. J. Wu, H. Yaguchi, K. Onabe, R. Ito, and Y. Shiraki, Appl. Phys. Lett. 71, 2067 (1997).
17. I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, Z. Romanowski, M. Wroblewski, and S. Porowski, J. Cryst. Growth 246, 177 (2002).
18. I. Grzegory, S. Krukowski, M. Leszczynski, P. Perlin, T. Suski, and S. Porowski, Acta Phys. Pol. A 100, 57 (2001).
19. S. V. Novikov, N. Zainal, C. T. Foxon, A. J. Kent, F. Luckert, P. R. Edwards, and R. W. Martin, Phys. Status Solidi C 7, 2033 (2010).
20. S. V. Novikov, N. Zainal, A. V. Akimov, C. R. Staddon, C. T. Foxon, A. J. Kent, D. P. Nicholls, and S. E. Hooper, Proc. ICNS 8, P4 (2009).
21. D. Moss, A. V. Akimov, S. V. Novikov, R. P. Campion, C. R. Staddon, N. Zainal, C. T. Foxon, and A. J. Kent, J. Phys. D: Appl. Phys. 42, 115412 (2009).
22. T. Schupp, K. Lishka, and D. J. As, J. Cryst. Growth 312 1500 (2010).
23. M. P. Thompson, G. W. Auner, and A. R. Drews, J. Electron. Mater. 28, L17 (1999).
24. D. Gerthsen, B. Neubauer, Ch. Dieker, R. Lantier, A. Rizzi, and H. Luth, J. Cryst. Growth 200, 353 (1999).
25. A. Nakadaira and H. Tanaka, Appl. Phys. Lett. 70, 2720 (1997).
26. V. Cimalla, V. Lebedev, U. Kaiser, R. Goldhahn, Ch. Foerster, J. Pezoldt, and O. Ambacher, Phys. Status Solidi C 2, 2199 (2005).
27. T. Koizumi, H. Okumura, K Balakrishnan, H. Harima, T. Inoue, Y. Ishida, T. Nagatomo, S. Nakashima, and S. Yoshida, J. Cryst. Growth 201/202, 341 (1999)