Study of unintentional arsenic incorporation into free-standing zincblende GaN and AlGaN layers grown by molecular beam epitaxy on GaAs substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2033-2035

  Novikov, S V ^a   Zainal, N ^a   Foxon, C T ^a   Kent, A J ^a   Luckert, F ^b   Edwards, P R ^b   Martin, R W ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

AlGaN; Diffusion; Doping; Electron probe microanalysis; GaN; MBE; SIMS

Indexed keywords

ALGAN; DOPING; ELECTRON PROBE; GAN; MBE; SIMS;

ARSENIC; CORROSION RESISTANCE; DIFFUSION; ELECTRON PROBE MICROANALYSIS; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PROBES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ACTIVE AGENTS; ZINC;

GALLIUM ALLOYS;

EID: 77955820264     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983420     Document Type: Conference Paper

References (3)

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