Free-standing zinc-blende (cubic) GaN layers and substrates

Journal of Crystal Growth

Volumn 310, Issue 17, 2008, Pages 3964-3967

  Novikov, S V ^a   Stanton, N M ^a   Campion, R P ^a   Foxon, C T ^a   Kent, A J ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SUBSTRATES; ZINC;

A1. SUBSTRATES; A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; B2. SEMICONDUCTING III-V MATERIALS; CHARACTERISATION; COMMERCIAL PRODUCTIONS; DEVICE STRUCTURES; GAN CRYSTALS; GAN LAYERS; GAN SUBSTRATES; IMPROVED PERFORMANCE; LATTICE-MATCHED SUBSTRATES; NON-POLAR; POTENTIAL APPLICATIONS; ZINC-BLENDE;

GALLIUM ALLOYS;

EID: 49449113048     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.018     Document Type: Article

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