Modelling of cubic AlxGa1-xN/GaN resonant tunnel diode structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 2262-2264

  Zainal, N ^a   Walker, P ^a   Kent, A J ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

AlGaN GaN; Electrical properties; Modeling; Tunneling diode

Indexed keywords

ALGAN/GAN; BAND OFFSETS; BARRIER COMPOSITIONS; BARRIER THICKNESS; CURRENT MAGNITUDES; DIODE STRUCTURE; DOUBLE BARRIERS; ELECTRICAL PROPERTY; FIGURE OF MERIT; MODELING; OPTIMUM PARAMETERS; RESONANT PEAKS; RESONANT TUNNELLING DIODE; TUNNELING DIODES; WELL WIDTH;

ALUMINUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GALLIUM NITRIDE; RESONANT TUNNELING; SEMICONDUCTOR DIODES; STRUCTURAL OPTIMIZATION;

RESONANT TUNNELING DIODES;

EID: 77955791546     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983543     Document Type: Conference Paper

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