Optical properties of cubic GaN grown on SiC/Si substrates

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 168-172

  Philippe, A ^a   Bru Chevallier, C ^a   Vernay, M ^a   Guillot, G ^a   Hubner J ^b   Daudin, B ^b   Feuillet, G ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; EXCITONS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REFLECTION; SILICON; SILICON CARBIDE; SUBSTRATES; TEMPERATURE;

CUBIC GALLIUM NITRIDE; DONOR BOUND; EXCITONIC TRANSITION; FREE EXCITONIC RECOMBINATIONS; PHOTOREFLECTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033528885     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00413-9     Document Type: Article

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