Epitaxial growth of zinc-blende AlN on Si(100) substrates by plasma source molecular beam epitaxy

Journal of Electronic Materials

Volumn 28, Issue 10, 1999, Pages

  Thompson, Margarita P ^a   Auner, Gregory W ^b   Drews, Andrew R ^c  

^a WAYNE STATE UNIVERSITY   (United States)

^b Wayne State University   (United States)

^c FORD MOTOR COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL SYMMETRY; FILM PREPARATION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON;

PLASMA SOURCE MOLECULAR BEAM EPITAXY (PSMBE);

SEMICONDUCTING FILMS;

EID: 0033321238     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0252-2     Document Type: Article

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