Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 71, Issue 15, 1997, Pages 2067-2069

  Wu, J ^a   Yaguchi, H ^a   Onabe, K ^a   Ito, R ^a   Shiraki, Y ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; OPTICAL PROPERTIES; PHOTOMULTIPLIERS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

DONOR ACCEPTOR; EXCITATION INTENSITY DEPENDENCE; EXCITONIC EMISSION; OPTICAL QUALITY; TEMPERATURE DEPENDENCE;

PHOTOLUMINESCENCE;

EID: 0031247062     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119344     Document Type: Article

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