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Journal of the Electrochemical Society

Volumn 158, Issue 6, 2011, Pages

Thermal atomic layer deposition (ALD) of Ru films for cu direct plating

(6) Choi, Sang Hyeok a Cheon, Taehoon a Kim, Soo Hyun a Kang, Dae Hwan b Park, Gye Soon c Kim, Sunjung c

a Yeungnam University (South Korea)

b SAMSUNG Electronics (South Korea)

c University of Ulsan (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CU ELECTROPLATING; CYCLOHEXADIENES; DENSE FILMS; DEPOSITION TEMPERATURES; DIRECT PLATING; FILM RESISTIVITY; HIGH DENSITY; HIGH GROWTH RATE; IMPURITIES IN; METHYLBENZENES; PARTIAL DECOMPOSITION; RU FILM; SEED LAYER; STEP COVERAGE; SUBSTRATE TEMPERATURE; TEMPERATURE WINDOW;

ASPECT RATIO; ATOMIC LAYER DEPOSITION; COPPER; GROWTH RATE; MOLECULAR OXYGEN; RUTHENIUM; SILICON COMPOUNDS; SUBSTRATES; TOLUENE;

FILM GROWTH;

EID: 79955532729 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3575163 Document Type: Article

Times cited : (57)

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