Atomic layer deposition of ru nanocrystals with a tunable density and size for charge storage memory device application

Electrochemical and Solid-State Letters

Volumn 11, Issue 9, 2008, Pages

  Yim, Sung Soo ^a   Lee, Do Joong ^a   Kim, Ki Su ^a,c   Lee, Moon Sang ^a,d   Kim, Soo Hyun ^b,e   Kim, Ki Bum ^a,e  

^a Seoul National University   (South Korea)

^b Yeungnam University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^e ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; DATA STORAGE EQUIPMENT; EPITAXIAL GROWTH; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; PHYSICAL VAPOR DEPOSITION; PLASMA DEPOSITION; PLASMAS; PULSED LASER DEPOSITION;

ATOMIC LAYER DEPOSITION (ATL); ATOMIC LAYERS; AVERAGE SIZE; CHARGE STORAGE; DENSITY VARIATIONS; DEPOSITION METHODS; DEVICE APPLICATIONS; ELECTROCHEMICAL SOCIETY (ECS); FLOATING GATE (FG); NANO CRYSTALS; OPTIMUM DENSITY; SIZE RANGES; SPATIAL DENSITIES;

ATOMIC LAYER DEPOSITION;

EID: 48249095496     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2952432     Document Type: Article

References (14)

1. A. Thean and J. -P. Leburton, IEEE Potentials, 21, 35 (2002).
2. T. -H. Hou, C. Lee, V. Narayana, U. Ganguly, and E. C. Kan, IEEE Electron Device Lett., 53, 3095 (2006).
3. T. -H. Hou, C. Lee, V. Narayana, U. Ganguly, and E. C. Kan, IEEE Electron Device Lett., 53, 3103 (2006).
4. B. DeSalvo, G. Ghibaudo, G. Pananakis, P. Masson, T. Baron, N. Buffet, A. Fernandes, and B. Guillaumot, IEEE Trans. Electron Devices 0018-9383 10.1109/16.936709, 48, 1789 (2001).
5. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2002.802617, 49, 1606 (2002).
6. J. J. Lee, Y. Harada, J. W. Pyun, and D. -L. Kwong, Appl. Phys. Lett. 0003-6951 10.1063/1.1881778, 86, 103505 (2005).
7. R. Muralidhar, R. F. Steimle, M. Sadd, R. Rao, C. T. Swift, E. J. Prinz, J. Yater, L. Grieve, K. Harber, B. Hradsky, Tech. Dig.-Int. Electron Devices Meet., 2003, 26.2.1.
8. S. J. Baik, S. Choi, U. -I. Chung, and J. T. Moon, Tech. Dig.-Int. Electron Devices Meet., 2003, 22.3.1.
9. B. De Salvo, C. Gerardi, S. Lombardo, T. Baron, L. Perniola, D. Mariolle, P. Mur, A. Toffoli, M. Gely, M. N. Semeria, Tech. Dig.-Int. Electron Devices Meet., 2003, 26.1.1.
10. S. -S. Yim, M. -S. Lee, K. -S. Kim, and K. -B. Kim, Appl. Phys. Lett. 0003-6951 10.1063/1.2338793, 89, 093115 (2006).
11. F. Mazen, T. Baron, A. M. Papon, R. Truche, and J. M. Hartmann, Appl. Surf. Sci., 214, 359 (2003).
12. O. -K. Kwon, S. -H. Kwon, H. -S. Park, and S. -W. Kang, J. Electrochem. Soc. 0013-4651 10.1149/1.1809576, 151, C753 (2004).
13. S. -S. Yim, D. -J. Lee, K. -S. Kim, K. -B. Kim, S. -H. Kim, and T. -S. Yoon, J. Appl. Phys., 103, 113509 (2008)
14. K. J. Park, D. B. Terry, S. M. Stewart, and G. N. Parsons, Langmuir 0743-7463 10.1021/la061898u, 23, 6106 (2007).