Atomic layer deposition of ruthenium thin films from an amidinate precursor

Chemical Vapor Deposition

Volumn 15, Issue 10-12, 2009, Pages 312-319

  Wang, Hongtao ^b   Gordon, Roy G ^a   Alvis, Roger ^c   Ulfig, Robert M ^d  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c Thermo Fisher Scientific   (United States)

^d Imago Scientific Instruments   (United States)

Author keywords

Ald; O2 exposure; Ruthenium thin films

Indexed keywords

ALD; AMIDINATES; ATOMIC PROBES; CARBON IMPURITIES; FILM/SUBSTRATE INTERFACE; LOW LEVEL; O2 EXPOSURE; OXYGEN EXPOSURE; RECOMBINATIVE DESORPTION;

ATOMS; CONDUCTIVE FILMS; CRYSTALLITES; DESORPTION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OXYGEN; RUTHENIUM; THIN FILMS;

DEPOSITION;

EID: 73849129873     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200906789     Document Type: Article

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