GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al2O3 gate oxide

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Merckling, C ^a   Sun, X ^b,c   Alian, A ^a,b   Brammertz, G ^a   Afanas'Ev, V V ^b   Hoffmann, T Y ^a   Heyns, M ^a,b   Caymax, M ^a   Dekoster, J ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONIDE-BASED SEMICONDUCTORS; BAND GAPS; CHANNEL DEVICE; CMOS DEVICES; DRIVE CURRENTS; ELECTRICAL PASSIVATION; FUTURE GENERATIONS; GATE OXIDE; HETEROEPITAXY; HIGH CARRIER MOBILITY; IN-SITU; IN-SITU DEPOSITION; INP; INTERFACIAL LAYER; MOLECULAR BEAM EPITAXIAL GROWTH; P-TYPE; POWER CONSUMPTION; VALENCE BAND OFFSETS;

ALUMINUM; DIELECTRIC MATERIALS; EPITAXIAL GROWTH; GATE DIELECTRICS; GATES (TRANSISTOR); HOLE MOBILITY; MOS CAPACITORS; PASSIVATION;

GALLIUM ALLOYS;

EID: 79955420606     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3569618     Document Type: Conference Paper

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