Molecular beam epitaxy passivation studies of Ge and III-V semiconductors for advanced CMOS

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1592-1595

  Merckling, C ^a   Penaud, J ^b   Kohen, D ^a   Bellenger, F ^a,c   Alian, A ^a   Brammertz, G ^a   El Kazzi, M ^d   Houssa, M ^c   Dekoster, J ^a   Caymax, M ^a,c   Meuris, M ^a   Heyns, M M ^a,c  

^a IMEC   (Belgium)

^b Riber   (France)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d SUN Synchrotron   (France)

Author keywords

High mobility semiconductors; Molecular beam epitaxy (MBE); Passivation

Indexed keywords

ADVANCED CMOS; CMOS TECHNOLOGY; ELECTRICAL PROPERTY; GAAS; HIGH MOBILITY; HIGH MOBILITY SEMICONDUCTORS; II-IV SEMICONDUCTORS; MOLECULAR BEAM DEPOSITION; MOLECULAR BEAM EPITAXY (MBE); PERFORMANCE REQUIREMENTS; SUBSTRATE MATERIAL;

CHEMICAL MODIFICATION; CRYSTAL GROWTH; DESCALING; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GERMANIUM; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; MOS DEVICES; PASSIVATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM WIRES;

MOLECULAR BEAMS;

EID: 67349166635     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.048     Document Type: Article

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