Ge and III/V as enabling materials for future CMOS technologies

ECS Transactions

Volumn 3, Issue 7, 2006, Pages 511-518

  Heyns, M ^a,b   Meuris, M ^a   Caymax, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; MOS DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

CMOS TECHNOLOGIES; HIGH MOBILITY SUBSTRATES; SILICON SUBSTRATES;

SEMICONDUCTING GERMANIUM;

EID: 33847000926     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355848     Document Type: Conference Paper

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