Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy

Journal of Physics D: Applied Physics

Volumn 40, Issue 4, 2007, Pages 1080-1084

  Hao, Ruiting ^a   Xu, Yingqiang ^a   Zhou, Zhiqiang ^a   Ren, Zhengwei ^a   Ni, Haiqiao ^a   He, Zhenhong ^a   Niu, Zhichuan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GROWTH RATE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE MORPHOLOGY; SURFACE ROUGHNESS; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; FLUX RATIOS; HALL MEASUREMENT;

FILM GROWTH;

EID: 33947620039     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/4/025     Document Type: Article

References (15)

1. Johnson J L, Samoska L A, Gossard A C, Merz J L, Jack M D, Chapman G R, Baumgratz B A, Kosai K and Johnson S M 1996 J. Appl. Phys. 80 1116
2. Mohseni H, Wojkowski J, Razeghi M, Brown G and Mitchel W 1999 J. Quantum Elec. 35 1041
3. Fuchs F, Weimer U, Pletschen W, Schmitz J, Ahlswede E, Walther M, Wagner J and Koidl P 1997 Appl. Phys. Lett. 71 3251
4. Aifer E H, Tischler J G, Warner J H, Vurgafman I, Kim J C, Meyer R, Bennett B R, Whitman L J, Jackson E M and Lorentzen J R 2005 Proc. SPIE 5732 259
5. Smith D L and Mailhiot C 1987 J. Appl. Phys. 62 2545
6. Youngdale E R, Meyer J R, Hoffman C A, Bartoli F J, Grein C H, Young P M, Ehrenreich H, Miles R H and Chow D H 1994 Appl. Phys. Lett. 64 3160
7. Mohseni H, Litvinov V I and Razeghi M 1998 Phys. Rev. B 58 15378
8. Zhang Y, Baruch N and Wang W I 1993 Appl. Phys. Lett. 63 1068
9. Johnson G R, Cavenett B C, Kerr T M, Kirby P B and Wood C E C 1988 Semicond. Sci. Technol. 3 1157
10. Qian W, Skowronski M, Kaspi R, De Graef M and Dravid V P 1997 J. Appl. Phys. 81 7268
11. Lee M, Nicholas D J, Singer K E and Hamilton B 1986 J. Appl. Phys. 59 2895
12. Anayama C, Tanahashi T, Kuwatsuka H, Nishiyama S, Isozumi S and Nakajima K 1990 Appl. Phys. Lett. 56 239
13. Mohseni H, Tahraoui A, Wojkowski J and Razeghi M 2000 Appl. Phys. Lett. 77 1572
14. Grandjean N and Massies J 1993 J. Crystal Growth. 134 51
15. Lee M, Nicholas D J, Singer K E and Hamilto B 1986 J. Appl. Phys. 59 2895