Dependence of the AlSb buffers on GaSb/GaAs(0 0 1) heterostructures

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 230-234

  Kim, H S ^a   Noh, Y K ^a   Kim, M D ^a   Kwon, Y J ^b   Oh, J E ^b   Kim, Y H ^c   Lee, J Y ^c   Kim, S G ^d   Chung, K S ^e  

^a Chungnam National University   (South Korea)

^b Hanyang University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d Joongbu University   (South Korea)

^e Kyung Hee University   (South Korea)

Author keywords

A1. Interfaces; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; VECTORS;

ANTIMONIDES; DISLOCATION ARRAY; SEMICONDUCTING III-V MATERIALS; STRAIN-RELIEF;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33947529493     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.223     Document Type: Article

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