Epitaxial growth and formation of interfacial misfit array for tensile GaAs on GaSb

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Huang, S H ^a   Balakrishnan, G ^a   Mehta, M ^a   Khoshakhlagh, A ^a   Dawson, L R ^a   Huffaker, D L ^a   Li, P ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED GASB ACTIVE REGION; GAAS DEVICE MATRIX; INTERFACIAL MISFIT (IMF); MATERIAL DEMONSTRATION;

CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; LATTICE MISMATCH; TENSILE PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34247363692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2723649     Document Type: Article

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