Buffer-dependent mobility and morphology of InAs/(Al,Ga)Sb quantum wells

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 894-897

  Thomas, M ^a   Blank, H R ^a   Wong, K C ^b   Kroemer, H ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

III V semiconductors; Low field transport and mobility; Piezoresistance

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION EFFECTS; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS;

ADATOMS; LATTICE MISMATCH; PIEZORESISTANCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031147004     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00920-7     Document Type: Article

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