Electronic structural analysis of transparent In2O3-ZnO films by hard X-ray photoelectron spectroscopy

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 3008-3011

  Shibuya, Tadao ^a   Yoshinaka, Masahiro ^a   Shimane, Yukio ^a   Utsuno, Futoshi ^a   Yano, Koki ^a   Inoue, Kazuyoshi ^a   Ikenagab, Eiji ^b   Kim, Jung J ^b   Ueda, Shigenori ^c   Obata, Masaaki ^c   Kobayashi, Keisuke ^c  

^a IDEMITSU KOSAN CO LTD   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Hard X ray photoelectron spectroscopy; Indium zinc oxide; Transparent conductive oxide

Indexed keywords

AMORPHOUS STRUCTURES; BEFORE AND AFTER; BULK SENSITIVE; CONDUCTION-BAND MINIMUM; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; INDIUM ZINC OXIDES; SCATTERING CENTERS; TRANSPARENT CONDUCTIVE OXIDES; TRANSPARENT FILMS; ZNO FILMS;

AMORPHOUS FILMS; CONDUCTION BANDS; CONDUCTIVE FILMS; ELECTRON MOBILITY; ELECTRONIC STATES; ELECTRONS; INDIUM; METALLIC FILMS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SPECTRUM ANALYSIS; STRUCTURAL ANALYSIS; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77649123792     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.170     Document Type: Article

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