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Volumn 98, Issue 8, 2011, Pages

Defects in ZnO transparent conductors studied by capacitance transients at ZnO/Si interface

(13) Li, Baoe a Adachi, Yutaka a Li, Jianyong a Okushi, Hedeyo a Sakaguchi, Isao a Ueda, Shigenori a Yoshikawa, Hideki a Yamashita, Yoshiyuki a Senju, Shoichi a Kobayashi, Keisuke a Sumiya, Masatomo a Haneda, Hajime a Ohashi, Naoki a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; AZO FILMS; CAPACITANCE TRANSIENT; DEEP LEVEL; DEPLETION LAYER; HIGH CONCENTRATION; P-TYPE SILICON; PHOTOEMISSION SPECTROSCOPY; SHALLOW DONORS; TRANSIENT CAPACITANCE; TRANSPARENT CONDUCTORS; TRAP LEVELS; ZNO;

EMISSION SPECTROSCOPY; ZINC OXIDE;

CAPACITANCE;

EID: 79952085539 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3556440 Document Type: Article

Times cited : (19)

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