Electro-optic investigation of the surface trapping efficiency in n-alkanethiol SAM passivated GaAs(001)

Nanotechnology

Volumn 22, Issue 23, 2011, Pages

  Marshall, Gregory M ^a,b   Lopinski, Gregory P ^b   Bensebaa, Farid ^b   Dubowski, Jan J ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALKANETHIOLS; BANDBENDING; CARRIER CAPTURE; ELECTRO-OPTIC CHARACTERISTIC; ELECTRO-OPTICS; ELECTROSTATIC POTENTIALS; GAAS(001); INTERFACIAL DIPOLE LAYERS; KELVIN PROBE; NON EQUILIBRIUM; SEMI-INSULATING; SURFACE BARRIER; SURFACE RECOMBINATION VELOCITIES; SURFACE TRAPPING; TRANSPORT MODELING;

CHEMISORPTION; GALLIUM ALLOYS; GALLIUM ARSENIDE; PASSIVATION; SEMICONDUCTING GALLIUM;

SELF ASSEMBLED MONOLAYERS;

EID: 79954592654     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/23/235704     Document Type: Review

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