Passivation of GaAs by octadecanethiol self-assembled monolayers deposited from liquid and vapor phases

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 2, 2009, Pages 637-648

  Budz, H A ^a   Biesinger, M C ^b   LaPierre, R R ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; BONDING CONFIGURATIONS; CLEANING PROCESS; DEPOSITION TECHNIQUES; DILUTE SOLUTIONS; ELLIPSOMETRY MEASUREMENTS; ENHANCED STABILITIES; GAAS; GAAS SUBSTRATES; GAAS SURFACES; GAAS(1 0 0); HIGH RESOLUTIONS; LIQUID-PHASE; OCTADECANETHIOL; OCTADECANETHIOL SELF-ASSEMBLED MONOLAYERS; OVERALL QUALITIES; PREPARATION METHODS; SAMS; STRUCTURAL AND OPTICAL PROPERTIES; SURFACE COVERAGES; SURFACE SITES; SURFACE TERMINATIONS; THIOLATE; TIME DEPENDENTS; VACUUM ENVIRONMENTS; VAPOR PHASIS; VAPOR-DEPOSITED FILMS; VAPOR-PHASE; X-RAY PHOTOELECTRON SPECTROSCOPIES;

BOND STRENGTH (CHEMICAL); CHEMICAL CLEANING; CONTACT ANGLE; ELECTRODEPOSITION; ETHANOL; FILM PREPARATION; LIQUIDS; OPTICAL PROPERTIES; PASSIVATION; SELF ASSEMBLED MONOLAYERS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; SURFACE CLEANING; VACUUM; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 64549123115     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3100266     Document Type: Article

References (51)

1. G. Bruno, P. Capezzuto, and M. Losurdo, Vacuum 0042-207X 10.1016/S0042-207X(00)00127-5 57, 189 (2000).
2. M. Kang and H. Park, Jpn. J. Appl. Phys. 40, 4454 (2001). 0021-4922
3. S. Anantathanasarn and H. Hasegawa, Appl. Surf. Sci. 0169-4332 10.1016/S0169-4332(01)00840-6 190, 343 (2002).
4. S. Arabasz, E. Bergignat, G. Hollinger, and J. Szuber, Vacuum 0042-207X 10.1016/j.vacuum.2005.11.067 80, 888 (2006).
5. C. Ashby, K. Zavadil, A. Baca, P. Chang, B. Hammons, and M. Hafich, Appl. Phys. Lett. 0003-6951 10.1063/1.125734 76, 327 (2000).
6. O. Dassa, V. Sidorov, Y. Paz, and D. Ritter, J. Electrochem. Soc. 0013-4651 10.1149/1.2136072 153, G91 (2006).
7. K. Butcher, R. Egan, T. Tansley, and D. Alexiev, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.589018 14, 152 (1996).
8. M. Kang, J. Kim, and H. Park, Jpn. J. Appl. Phys. 39, 7003 (2000). 0021-4922
9. R. Gottscho, B. Preppernau, S. Pearton, A. Emerson, and K. Giapis, J. Appl. Phys. 0021-8979 10.1063/1.346813 68, 440 (1990).
10. S. Lunt, P. Santangelo, and N. Lewis, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.585743 9, 2333 (1991).
11. K. Adlkofer, E. Duijs, F. Findeis, M. Bichler, A. Zrenner, E. Sackmann, G. Abstreiter, and M. Tanaka, Phys. Chem. Chem. Phys. 1463-9076 10.1039/b108683a 4, 785 (2002).
12. X. Ding and J. Dubowski, Proc. SPIE 0277-786X 10.1117/12.605649 5713, 545 (2005).
13. K. Adlkofer and M. Tanaka, Langmuir 0743-7463 10.1021/la001507q 17, 4267 (2001).
14. J. Dorsten, J. Maslar, and P. Bohn, Appl. Phys. Lett. 0003-6951 10.1063/1.113357 66, 1755 (1995).
15. C. McGuiness, A. Shaporenko, C. Mars, S. Uppili, M. Zharnikov, and D. Allara, J. Am. Chem. Soc. 0002-7863 10.1021/ja058657d 128, 5231 (2006).
16. H. Ohno, M. Motomatsu, W. Mizutani, and H. Tokumoto, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.34.1381 34, 1381 (1995).
17. K. Remashan and K. Bhat, Thin Solid Films 0040-6090 10.1016/S0040- 6090(98)01414-X 342, 20 (1999).
18. S. Ye, G. Li, H. Noda, K. Uosaki, and M. Osawa, Surf. Sci. 0039-6028 10.1016/S0039-6028(03)00239-5 529, 163 (2003).
19. D. Wieliczka, X. Ding, and J. Dubowski, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.2218850 24, 1756 (2006).
20. Wafer Technology Ltd., 34 Maryland Road, Tongwell, Milton Keynes, Bucks MK15 8HJ, United Kingdom (http://www.wafertech.co.uk/).
21. Sigma-Aldrich, 3050 Spruce Street, St. Louis, MO 63103 (http://www.sigmaaldrich.com/).
22. H. Budz and R. LaPierre, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.2981067 26, 1425 (2008).
23. N. Razek, K. Otte, T. Chasse, D. Hirsch, A. Schindler, F. Frost, and B. Rauschenbach, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.1488949 20, 1492 (2002).
24. J. A. Woollam Co., Inc., 645 M Street, Suite 102, Lincoln, NE 68508-2243 (http://www.jawoollam.com/).
25. Sciencetech Inc., 60 Meg Drive, London, ON N6E 3T6, Canada (http://www.sciencetech-inc.com/).
26. T. Hou, C. Greenlief, S. Keller, L. Nelen, and J. Kauffman, Chem. Mater. 0897-4756 10.1021/cm9704995 9, 3181 (1997).
27. O. Nakagawa, S. Ashok, C. Sheen, J. Märtensson, and D. Allara, Jpn. J. Appl. Phys. 30, 3759 (1991). 0021-4922
28. C. Kirchner, M. George, B. Stein, W. Parak, H. Gaub, and M. Seitz, Adv. Funct. Mater. 1616-301X 10.1002/1616-3028(20020418)12:4<266::AID- ADFM266>3.0.CO;2-U 12, 266 (2002).
29. C. Wagner, A. Naumkin, A. Kraut-Vass, J. Allison, C. Powell, and J. Rumble, NIST X-ray Photoelectron Spectroscopy Database, The Measurement Services Division of the National Institute of Standards and Technology (online), August 27, 2007 (http://srdata.nist.gov/xps) (accessed August 25, 2008).
30. S. Ghosh, M. Biesinger, R. LaPierre, and P. Kruse, J. Appl. Phys. 0021-8979 10.1063/1.2743729 101, 114322 (2007).
31. C. McGuiness, A. Shaporenko, M. Zharnikov, A. Walker, and D. Allara, J. Phys. Chem. C 1932-7447 10.1021/jp065173a 111, 4226 (2007).
32. Y. Gu and D. Waldeck, J. Phys. Chem. B 1089-5647 10.1021/jp9822485 102, 9015 (1998).
33. C. Hamilton, S. Hicks, B. Vogele, J. Marsh, and J. Aitchison, Electron. Lett. 0013-5194 10.1049/el:19950911 31, 1393 (1995).
34. M. Yamada, Y. Ide, and K. Tone, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.31.L1157 31, L1157 (1992).
35. E. Yoon, R. Gottscho, V. Donnelly, and H. Luftman, Appl. Phys. Lett. 0003-6951 10.1063/1.106894 60, 2681 (1992).
36. M. Losurdo, P. Capezzuto, and G. Bruno, Thin Solid Films 313-314, 501 (1998).
37. Veeco Application Note No. 3/98 (online), September 1998 (http://www.veeco.com/pdfs/appnotes/98sept-ahs-78.pdf) (accessed September 13, 2008).
38. A. Chanda, S. Verma, and C. Jacob, Bull. Mater. Sci. 0250-4707 10.1007/s12034-007-0087-5 30, 561 (2007).
39. D. Gräf, M. Grundner, D. Lüdecke, and R. Schulz, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.576788 8, 1955 (1990).
40. J. Shin, K. Geib, and C. Wilmsen, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.585744 9, 2337 (1991).
41. O. Voznyy and J. Dubowski, J. Phys. Chem. C 112, 3726 (2008). 1932-7447
42. H. Sik, Y. Feurprier, C. Cardinaud, G. Turban, and A. Scavenne, J. Electrochem. Soc. 0013-4651 10.1149/1.1837749 144, 2106 (1997).
43. I. Gouzman, M. Dubey, M. Carolus, J. Schwartz, and S. Bernasek, Surf. Sci. 600, 773 (2006). 0039-6028
44. M. Rei Vilar, J. Beghdadi, F. Debontridder, R. Artzi, R. Naaman, A. Ferraria, and A. Botelho do Rego, Surf. Interface Anal. 0142-2421 10.1002/sia.2062 37, 673 (2005).
45. Y. Jun, X. Zhu, and J. Hsu, Langmuir 0743-7463 10.1021/la052473v 22, 3627 (2006).
46. M. Kuball, M. Kelly, P. Santos, and M. Cardona, Phys. Rev. B 0163-1829 10.1103/PhysRevB.50.8609 50, 8609 (1994).
47. G. Bruno, P. Capezzuto, and M. Losurdo, Phys. Rev. B 0163-1829 10.1103/PhysRevB.54.17175 54, 17175 (1996).
48. J. Shi, B. Hong, A. Parikh, R. Collins, and D. Allara, Chem. Phys. Lett. 0009-2614 10.1016/0009-2614(95)01085-N 246, 90 (1995).
49. P. Snyder, N. Ianno, B. Wigert, S. Pittal, B. Johs, and J. Woollam, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.588059 13, 2255 (1995).
50. S. Lodha and D. Janes, Proceedings of the Fourth IEEE Conference on Nanotechnology, 2004 (unpublished), p. 278.
51. S. Adachi and D. Kikuchi, J. Electrochem. Soc. 0013-4651 10.1149/1.1394112 147, 4618 (2000).