Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors

Applied Physics Letters

Volumn 92, Issue 12, 2008, Pages

  Lee, Kangho ^a   Lu, Gang ^b   Facchetti, Antonio ^b   Janes, David B ^a   Marks, Tobin J ^b  

^a PURDUE UNIVERSITY   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MULTILAYERS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

INTERFACIAL TRAPS;

FIELD EFFECT TRANSISTORS;

EID: 41349100904     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2899965     Document Type: Article

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