Surface barrier analysis of semi-insulating and n + -type GaAs(0 0 1) following passivation with n-alkanethiol SAMs

Applied Surface Science

Volumn 257, Issue 9, 2011, Pages 4543-4546

  Marshall, Gregory M ^a,b   Bensebaa, Farid ^b   Dubowski, Jan J ^a  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

GaAs; Self assembled monolayers; Surface Fermi level; X ray photoelectron spectroscopy

Indexed keywords

BINDING ENERGY; FERMI LEVEL; GALLIUM ARSENIDE; GOLD; III-V SEMICONDUCTORS; PASSIVATION; PHOTOELECTRONS; PHOTONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR JUNCTIONS; SURFACE DEFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALKANETHIOL SELF-ASSEMBLED MONOLAYERS; EMERGING TECHNOLOGIES; ENERGY REFERENCE; FERMI LEVEL PINNING; GAAS; INTEGRATION TECHNIQUES; MOLECULAR SEMICONDUCTORS; SURFACE BARRIER;

SELF ASSEMBLED MONOLAYERS;

EID: 78951484992     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.12.084     Document Type: Article

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