Surface voltage and surface photovoltage: History, theory and applications

Measurement Science and Technology

Volumn 12, Issue 3, 2001, Pages 16-31

  Schroder, D K ^a  

^a Arizona State University   (United States)

Author keywords

Charge; Diffusion length; Kelvin probe; Lifetime; Oxide; Oxide thickness; Photovoltage; Semiconductors; Surface voltage

Indexed keywords

SEMICONDUCTOR;

EID: 0035282141     PISSN: 09570233     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-0233/12/3/202     Document Type: Review

References (72)

1. Surface properties of germanium
2. Physical theory of semiconductor surfaces
3. Photovoltaic and photoconductive theory applied to InSb
4. Combined measurements of field-effect, surface photo-voltage and photoconductivity
5. Changes of surface conductivity of germanium with ambient
6. Measurement of minority carrier lifetime with the surface photovoltage
7. The surface photovoltaic effect in silicon and its application to measure the minority carrier lifetime
8. A method for the measurement of short minority carrier diffusion lengths in semiconductors
9. Silicon-wafer process evaluation using minority-carrier diffusion length measurements by the SPV method
10. Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures-I. Theory
11. Frequency dependence of the photo-EMF of strongly inverted Ge and Si MIS structures-Part. Experiment
12. Impedance of semiconductor-insulator-metal capacitors
13. Physical limitations on the frequency response of a semiconductor surface inversion layer
14. On a method of measuring contact electricity
15. Contact electricity of metals
16. Surface photovoltage phenomena: Theory, experiment, and applications
17. Large-signal surface photovoltage studies with germanium
18. Electron multiplication and surface charge on zinc oxide single crystals
19. High electric fields in silicon dioxide produced by corona charging
20. 2
21. 2
22. Uses of corona discharges in the semiconductor industry
23. Corona-oxide-semiconductor device characterization
24. Contact potential difference methods for full wafer characterization of oxidized silicon
25. Large-signal surface photovoltage studies with germanium
26. Open circuit voltage behavior of junction devices
27. Theory and experiment on the surface-photovoltage diffusion-length measurement as applied to amorphous silicon
28. Measurement of the minority-carrier diffusion length in thin semiconductor films
29. On the theoretical basis of the surface photovoltage technique
30. Carrier lifetimes in silicon
31. Non-contact mapping of heavy metal contamination for silicon IC fabrication
32. In-situ determination of Si wafer contamination using photoconductance decay measurements
33. Iron detection in the part per quadrillion range in silicon using surface photovoltage and photodissociation of iron-boron pairs
34. A fast, preparation-free method to detect iron in silicon
35. A fast, preparation-free method to detect iron in silicon
36. Metal contamination removal on silicon wafers using dilute acidic solutions
37. Evaluation of oxygen-related carrier recombination centers in high-purity Czochralski-grown Si crystals by the bulk lifetime measurements
38. Influence of Fe contamination in Czochralski-grown silicon single crystals on LSI-yield related crystal quality characteristics
39. Impact of Cu and Fe contamination on the minority carrier lifetime of silicon substrates
40. Detection of copper contamination in silicon by surface photovoltage diffusion length measurements
41. Measurement of carrier lifetime: Monitoring epitaxy quality
42. Fast noncontact diffusion-process monitoring
43. Non-contact corona-based process control measurements: Where we've been and where we're headed
44. Advances in surface photovoltage techniques for monitoring of the IC processes
45. Monitoring PSG plasma damage with COS
46. Contactless measurement of the Si-buried oxide interfacial charges in SOI wafers with surface photovoltage technique
47. Non-contact characterization of ultrathin dielectrics for the gigabit era
48. A new approach for measuring oxide thickness
49. Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
50. 2 on silicon induced by corona charging of the unmetallized surface
51. AC surface photovoltages in strongly-inverted oxidized p-type silicon wafers
52. Analysis of ac surface photovoltages in a depleted oxidized p-type silicon wafer
53. A scanning photon microscope for non-destructive observations of crystal defect and interface trap distributions in silicon wafers
54. Nondestructive diagnostic method using ac surface photovoltage for detecting metallic contaminants in silicon wafers
55. Non-contact measurements of the minority carrier recombination lifetime at the silicon surface
56. Surface minority carrier lifetime measurements using modulated photocurrent
57. Surface dopant concentration monitoring using noncontact surface charge profiling
58. Epilayer quality and yield improvement using the surface charge profiler as a non-destructive diagnostic technique
59. Optical properties of intrinsic silicon at 300 K
60. Standard test method for minority-carrier diffusion length in silicon by measurement of steady-state surface photovoltage
61. Interpretation of steady-state surface photovoltage measurements in epitaxial semiconductor layers
62. Study on surface photovoltage measurement of long diffusion length silicon: Simulation results
63. Minority carrier lifetime measurements in epitaxial silicon layers
64. Recent refinements in the surface photovoltage method for measuring very long minority carrier diffusion length
65. Present status of the surface photovoltage method (SPV) for measuring minority carrier diffusion length and related parameters
66. Silicon contamination control by lifetime measurements