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Applied Physics Letters

Volumn 98, Issue 15, 2011, Pages

Deep levels in tungsten doped n-type 3C-SiC

(7) Beyer, F C a Hemmingsson, C G a Gallstrom A a Leone, S a Pedersen, H a Henry, A a Janzn E a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL; ENERGY LEVEL; REFERENCE LEVELS;

DEEP LEVEL TRANSIENT SPECTROSCOPY; TUNGSTEN;

SILICON CARBIDE;

EID: 79954584863 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3579527 Document Type: Article

Times cited : (18)

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